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MBR30H150CT, MBRF30H150CT & SB30H150CT-1
Vishay General Semiconductor
Document Number: 88865
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
FEATURES
? Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0
flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
150 V
IFSM
260 A
VF
0.75 V
TJ
175 °C
ITO-220AB
TO-262AA
MBR30H150CT
MBRF30H150CT
SB30H150CT-1
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
1
2
3
1
2
3
1
2
3
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR30H150CT UNIT
Maximum repetitive peak reverse voltage VRRM
150 V
Working peak reverse voltage VRWM
150 V
Maximum DC blocking voltage VDC
150 V
Maximum average forward rectified current
total device
per diode
IF(AV)
30
15
A
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load per diode
IFSM
260 A
Peak repetitive reverse current per diode at tp
= 2 μs, 1 kHz I
RRM
1.0 A
Peak non-repetitive reverse surge energy per diode (8/20 μs waveform) ERSM
10 mJ
Non-repetitive avalanche energy per diode at 25 °C, IAS
= 2.0 A, L = 10 mH E
AS
20 mJ
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG
- 65 to + 175 °C
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min VAC
1500 V
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